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ELEX 3

ELEX 3

100問 • 2年前

問題一覧

1

For practical transistors the level of alpha typically extends from ___ to ___ with most approaching the higher end of the range.

0.90, 0.998

2

The concentration of minority carriers in semiconductors depends mainly on

temperature

3

The ___ region is the region normally employed for linear (undistorted) amplifiers.

Active

4

Compared to bipolar junction transistor, a JFET has

high input impedance and low voltage gain

5

In the Wein Bridge oscillator, which of the following is(are) frequency determining components?

R1, R2, C1, and C2

6

The number of diodes used in Full Wave Bridge rectifier is _____

4

7

The magnetic field strength required to remove residual magnetism is known as

coercive force

8

Which is the higher gain provided by a CE configuration?

Power

9

For a 4 bit DAC, the LSB is

6.25% of full scale

10

The current in a aemiconductor is produced by

both holes and electrons

11

Which logic family combines the advantages of MOS and TTL?

BiCMOS

12

With negative feedback, the returning signal

opposes the input signal

13

The capacitor that produces an ac ground is called a(n)

bypass capacitor

14

The logic gate produces a high output whenever at least one of the inputs is high

inclusive OR

15

What resistor type is found in SIPs and DIPs?

Thick Film

16

What factor does not affect CMOS?

output capacitance of the load gate

17

Convert the fractional binary number 001.0010 to decimal

1.125

18

The v-i characteristics of a diode may be

nonlinear

19

Convert the fractional decimal number 6.75 to binary.

110.1100

20

The lead lag circuit in the Wein Bridge oscillator has a resonant frequency at which attenuation is

1/3

21

What kind of logic device or circuit is used to store information?

Register

22

What is the minimum frequency at which a crystal will oscillate?

Fundamental

23

An SCR has a circuit, fusing rating of 50 A²s. This device is being used in a circuit where it could be subjected to a 100 A surge. Determine the maximum allowable duration of such surge.

5 ms

24

What best describes the circuit?

Clipper

25

What happens if the input capacitor of a transistor amplifier is short circuited?

biasing conditions will change

26

The main advantage of ECL over TTL or CMOS is

ECL is faster

27

The number "104" on a capacitor indicates:

0.1 µ

28

The range of voltages between V L(max) and V H(max) are

unacceptable

29

What is the major difference between SRAM and DRAM?

DRAMs must be periodically refreshed.

30

Battery differ from fuel cells in that

A battery is a closed system.

31

The center frequency of a band-pass filter is always equal to

geometric average of the critical frequencies

32

For CMOS gate, which is best speed power product?

1.4 pJ

33

Secondary emission occurs in

Tetrode

34

find the close loop transfer function T(s) = C(s)/R(s) for the system shown below.

(G3(G1 G2 + 1))/(1 + G1 H1)

35

To reduce the number of pins on high capacity DRAM chips, _____ is used so that a single pin can accommodate two different bits.

Multiplexing

36

A T-network with series capacitors and a parallel shunt inductor has which of the following properties

It is high pass filter.

37

To obtain very high input and output impedance in a feedback amplifier, the type of feedback utilized

current series

38

A diode with no depletion layer

Schottky Diode

39

How is 3.9 kOhm resistor color coded?

Orange, White, Red, Gold

40

The silicon controlled rectifier can be off

by forced commutation.

41

Which of the following memories is volatile?

RAM

42

A forward voltage of 9 V is applied to a diode in series with a 1 kΩ load resistor. The voltage across load resistor is zero. It is indicated that

diode is open circuited.

43

If two resistors have the same voltage drop in a series circuit. It means

They are of same value.

44

A log amplifier has ____ in the feedback loop.

either diode or BJT

45

The refresh period for capacitor used in DRAMs

2 ms

46

In a BJT circuit, a pnp transistor is replaced by npn transistor. To analyse the new circuit

replace all calculated voltages and currents by reverse values.

47

Intrinsic semiconductot material is characterized by a valence shell of how many electrons?

4

48

What semiconductor material is made from coal ash?

Germanium

49

It is best not to leave unused TTL inputs unconnected (open) because of TTL's

noise sensitivity

50

Which of the following best describes nonvolatile memory?

memory that retains stored information when electrical power is removed.

51

To obtain higher value of resistance, resistors are connected in

Series

52

A surge voltage has very high magnitude and very ____

Small duration and can be positive or negative

53

The depletion mode MOSFET can operate with positive as well as

negative gate voltages

54

The value of the combination is

200 n

55

Identify the circuit shown

Wein Bridge Oscillator

56

Which power amplifier can deliver maximum load power?

Class C

57

The typical low frequency gain of an industry standard of op-amp is _____

200,000

58

In the given circuit, what type of failure will cause the voltage at point B to equal the voltage at point C

R2 shorts

59

A logic probe is placed on the output of a gate and the display indicator is dim. A pulser is used on each of the input terminals, but the output indication does not change. What is wrong?

The output of the gate appears to be open.

60

The input impedance of op-amp circuit of figure is

10k Ohm

61

The ripple factor of a power supply is a measure of

its filter efficiency

62

The rms value of the wave in the figure below is

about 80 V

63

Name the 4 components: Photo darlington transistor, reed,

switch, piezo, coil

64

In the active region, while the collector-base function is _____-biased, the base-emitter function is ____-biased.

reverse, forward

65

On a CD ROM, ____ are recessed areas representing a 0.

Pits

66

At room temperature, the current in an intrinsic semiconductir is due to

holes and electrons

67

Germanium is ____ commonly used semiconductor material.

less

68

The v-i characteristics of a FET is shown in the figure. In which region is the constant current?

BC

69

In all metals

conductivity decreases with increase in temperature

70

Two transistors one n-p-n and other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n will have better frequency response. The electron mobility is

higher than hole mobility

71

The threshold voltage of an n channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3 V Pinch off would occur at a drain voltage of

2.5 V

72

Which of these has degenerate p and n materials?

Tunnel Diode

73

A Schottky diode clamp is used along with switching BJT for

reducing the switching time

74

If the reverse voltage across a p-n junction is increased three times, the junction capacitance

will decrease by an approximate factor of about 2

75

Which of these has highly doped p and n region?

Tunnel Diode

76

When a p-n junction is forward biased

the width of depletion layer decreases

77

The depletion layer around p-n junction in JFET consists of

immobile charges

78

Junction temperature is always the same as room temperature.

False

79

Silicon is preferred over germanium in manufacture of semiconductor devices. Forbidden gap in silicon is _____ that in germanium.

more than

80

At room temperature, semiconductor material is

slightly conducting

81

In a bipolar junction transistor the base region is made very thin so that

recombination in base region is minimum

82

The drain characteristics of JFET in operating region are

almost flat

83

As temperature increases

the forbidden energy gap in silicon and germanium decreases

84

When a reverse bias is applied to a p-n junction, the width of depletion layer

increases

85

Which of the following devices has a silicon dioxide layer?

MOSFET

86

Photo electric emission can occur only if

wavelength of incident radiation is less than threshold value

87

The reverse saturation current of a diode does not depend on temperature

False

88

The value of a in a transistor

is less than 1 but more than 0.9

89

Which of these has 3 layers?

PIN Diode

90

As per Einstein's equation, the velocity if emitted electron in photoelectric emission is given by the equation

(1/2)mv² ≤ hf - Uw

91

When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.

False

92

A semiconductor diode is biased forward in forward direction and carrying current I. The current due to holes in p material is

less than I

93

When a photoconductive device is exposed to light, its bulk resistance _____

decreases

94

When exposed to light, ___ are generated in the photoconductive device.

electron hole pairs

95

Which of the following elements act as donor impurities? 1. Gold 2. Phosphorus 3. Boron 4. Antimony 5. Arsenic 6. Indium

2, 4, 5

96

Light dependent resistor is

photo resistive device

97

A varactor diode is used for

tuning

98

One eV = 1.602 x 10^(-19) joules

True

99

When Vds is ____ rated value, avalance breakdown occurs

more than

100

When Vds is more than rated value the drain current in a JFET is ____

very high

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問題一覧

1

For practical transistors the level of alpha typically extends from ___ to ___ with most approaching the higher end of the range.

0.90, 0.998

2

The concentration of minority carriers in semiconductors depends mainly on

temperature

3

The ___ region is the region normally employed for linear (undistorted) amplifiers.

Active

4

Compared to bipolar junction transistor, a JFET has

high input impedance and low voltage gain

5

In the Wein Bridge oscillator, which of the following is(are) frequency determining components?

R1, R2, C1, and C2

6

The number of diodes used in Full Wave Bridge rectifier is _____

4

7

The magnetic field strength required to remove residual magnetism is known as

coercive force

8

Which is the higher gain provided by a CE configuration?

Power

9

For a 4 bit DAC, the LSB is

6.25% of full scale

10

The current in a aemiconductor is produced by

both holes and electrons

11

Which logic family combines the advantages of MOS and TTL?

BiCMOS

12

With negative feedback, the returning signal

opposes the input signal

13

The capacitor that produces an ac ground is called a(n)

bypass capacitor

14

The logic gate produces a high output whenever at least one of the inputs is high

inclusive OR

15

What resistor type is found in SIPs and DIPs?

Thick Film

16

What factor does not affect CMOS?

output capacitance of the load gate

17

Convert the fractional binary number 001.0010 to decimal

1.125

18

The v-i characteristics of a diode may be

nonlinear

19

Convert the fractional decimal number 6.75 to binary.

110.1100

20

The lead lag circuit in the Wein Bridge oscillator has a resonant frequency at which attenuation is

1/3

21

What kind of logic device or circuit is used to store information?

Register

22

What is the minimum frequency at which a crystal will oscillate?

Fundamental

23

An SCR has a circuit, fusing rating of 50 A²s. This device is being used in a circuit where it could be subjected to a 100 A surge. Determine the maximum allowable duration of such surge.

5 ms

24

What best describes the circuit?

Clipper

25

What happens if the input capacitor of a transistor amplifier is short circuited?

biasing conditions will change

26

The main advantage of ECL over TTL or CMOS is

ECL is faster

27

The number "104" on a capacitor indicates:

0.1 µ

28

The range of voltages between V L(max) and V H(max) are

unacceptable

29

What is the major difference between SRAM and DRAM?

DRAMs must be periodically refreshed.

30

Battery differ from fuel cells in that

A battery is a closed system.

31

The center frequency of a band-pass filter is always equal to

geometric average of the critical frequencies

32

For CMOS gate, which is best speed power product?

1.4 pJ

33

Secondary emission occurs in

Tetrode

34

find the close loop transfer function T(s) = C(s)/R(s) for the system shown below.

(G3(G1 G2 + 1))/(1 + G1 H1)

35

To reduce the number of pins on high capacity DRAM chips, _____ is used so that a single pin can accommodate two different bits.

Multiplexing

36

A T-network with series capacitors and a parallel shunt inductor has which of the following properties

It is high pass filter.

37

To obtain very high input and output impedance in a feedback amplifier, the type of feedback utilized

current series

38

A diode with no depletion layer

Schottky Diode

39

How is 3.9 kOhm resistor color coded?

Orange, White, Red, Gold

40

The silicon controlled rectifier can be off

by forced commutation.

41

Which of the following memories is volatile?

RAM

42

A forward voltage of 9 V is applied to a diode in series with a 1 kΩ load resistor. The voltage across load resistor is zero. It is indicated that

diode is open circuited.

43

If two resistors have the same voltage drop in a series circuit. It means

They are of same value.

44

A log amplifier has ____ in the feedback loop.

either diode or BJT

45

The refresh period for capacitor used in DRAMs

2 ms

46

In a BJT circuit, a pnp transistor is replaced by npn transistor. To analyse the new circuit

replace all calculated voltages and currents by reverse values.

47

Intrinsic semiconductot material is characterized by a valence shell of how many electrons?

4

48

What semiconductor material is made from coal ash?

Germanium

49

It is best not to leave unused TTL inputs unconnected (open) because of TTL's

noise sensitivity

50

Which of the following best describes nonvolatile memory?

memory that retains stored information when electrical power is removed.

51

To obtain higher value of resistance, resistors are connected in

Series

52

A surge voltage has very high magnitude and very ____

Small duration and can be positive or negative

53

The depletion mode MOSFET can operate with positive as well as

negative gate voltages

54

The value of the combination is

200 n

55

Identify the circuit shown

Wein Bridge Oscillator

56

Which power amplifier can deliver maximum load power?

Class C

57

The typical low frequency gain of an industry standard of op-amp is _____

200,000

58

In the given circuit, what type of failure will cause the voltage at point B to equal the voltage at point C

R2 shorts

59

A logic probe is placed on the output of a gate and the display indicator is dim. A pulser is used on each of the input terminals, but the output indication does not change. What is wrong?

The output of the gate appears to be open.

60

The input impedance of op-amp circuit of figure is

10k Ohm

61

The ripple factor of a power supply is a measure of

its filter efficiency

62

The rms value of the wave in the figure below is

about 80 V

63

Name the 4 components: Photo darlington transistor, reed,

switch, piezo, coil

64

In the active region, while the collector-base function is _____-biased, the base-emitter function is ____-biased.

reverse, forward

65

On a CD ROM, ____ are recessed areas representing a 0.

Pits

66

At room temperature, the current in an intrinsic semiconductir is due to

holes and electrons

67

Germanium is ____ commonly used semiconductor material.

less

68

The v-i characteristics of a FET is shown in the figure. In which region is the constant current?

BC

69

In all metals

conductivity decreases with increase in temperature

70

Two transistors one n-p-n and other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n will have better frequency response. The electron mobility is

higher than hole mobility

71

The threshold voltage of an n channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3 V Pinch off would occur at a drain voltage of

2.5 V

72

Which of these has degenerate p and n materials?

Tunnel Diode

73

A Schottky diode clamp is used along with switching BJT for

reducing the switching time

74

If the reverse voltage across a p-n junction is increased three times, the junction capacitance

will decrease by an approximate factor of about 2

75

Which of these has highly doped p and n region?

Tunnel Diode

76

When a p-n junction is forward biased

the width of depletion layer decreases

77

The depletion layer around p-n junction in JFET consists of

immobile charges

78

Junction temperature is always the same as room temperature.

False

79

Silicon is preferred over germanium in manufacture of semiconductor devices. Forbidden gap in silicon is _____ that in germanium.

more than

80

At room temperature, semiconductor material is

slightly conducting

81

In a bipolar junction transistor the base region is made very thin so that

recombination in base region is minimum

82

The drain characteristics of JFET in operating region are

almost flat

83

As temperature increases

the forbidden energy gap in silicon and germanium decreases

84

When a reverse bias is applied to a p-n junction, the width of depletion layer

increases

85

Which of the following devices has a silicon dioxide layer?

MOSFET

86

Photo electric emission can occur only if

wavelength of incident radiation is less than threshold value

87

The reverse saturation current of a diode does not depend on temperature

False

88

The value of a in a transistor

is less than 1 but more than 0.9

89

Which of these has 3 layers?

PIN Diode

90

As per Einstein's equation, the velocity if emitted electron in photoelectric emission is given by the equation

(1/2)mv² ≤ hf - Uw

91

When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.

False

92

A semiconductor diode is biased forward in forward direction and carrying current I. The current due to holes in p material is

less than I

93

When a photoconductive device is exposed to light, its bulk resistance _____

decreases

94

When exposed to light, ___ are generated in the photoconductive device.

electron hole pairs

95

Which of the following elements act as donor impurities? 1. Gold 2. Phosphorus 3. Boron 4. Antimony 5. Arsenic 6. Indium

2, 4, 5

96

Light dependent resistor is

photo resistive device

97

A varactor diode is used for

tuning

98

One eV = 1.602 x 10^(-19) joules

True

99

When Vds is ____ rated value, avalance breakdown occurs

more than

100

When Vds is more than rated value the drain current in a JFET is ____

very high