ELEX FLASHING PART 1

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問題一覧

Refer to the given figure. Determine the output voltage.

+Vsat

A zero-level detector is a

B. comparator with a trip point referenced to zero

If the value of resistor Rf in an averaging amplifier circuit is equal to the value of one input resistor divided by the number of inputs, the output will be equal to

D. the inverted average of the individual inputs

In an averaging amplifier, the input resistances are

C. greater than the feedback resistance

Refer to the given figure. This circuit is known as

C. an integrator.

The output of a Schmitt trigger is a

A. pulse waveform.

Refer to the given figure. This circuit is known as:

B. a differentiator.

Refer to the given figure. A square-wave input is applied to this amplifer. The output voltage is most likely to be

B. a triangle wave.

Refer to the given figure. What is the output voltage?

D. -Vsat

A comparator with a Schmitt trigger has

A. two trigger levels.

Which of the figures shown below represents the exclusive-NOR gate?

B. b

An output gate is connected to four input gates; the circuit does not function. Preliminary tests with the DMM indicate that the power is applied; scope tests show that the primary input gate has a pulsing signal, while the interconnecting node has no signal. The four load gates are all on different ICs. Which instrument will best help isolate the problem?

A. Current tracer

A logic probe is placed on the output of a gate and the display indicator is dim. A pulser is used on each of the input terminals, but the output indication does not change. What is wrong?

A. The output of the gate appears to be open.

The voltage across a coil when di/dt = 20 mA/s and L = 8H is?

B. 160 mV

A sine wave voltage is applied across an inductor. When the frequency of the voltage is decreased, the current

A. is increased

An inductor and a resistor are in series with a sine wave voltage source. The frequency is set so that the inductive reactance is equal to the resistance. If the frequency is increased, then

D. VL>VR

When the current through an inductor is cut in half, the amount of energy stored in the electromagnetic field

A. is quartered

The is an electromagnetic device that contains a coil rotating on a jeweled bearing mount.

B. d'Arsonval movement

The circuit of figure is

C. combination clipper

For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

A. remain unchanged

Which of the following is used for generating time varying wave forms?

D. UJT

n-type semiconductors

C. are produced when phosphorus is added as impurity to silicon

In all metals

A. conductivity decreases with increase in temperature

The voltage across a zener diode

B. is constant in reverse direction

Which of these has degenerate p and n materials?

C. Tunnel diode

A Schottky diode clamp is used along with switching BJT for

B. reducing the switching time

At room temperature a semiconductor material is

C. slightly conducting

The static characteristic of an adequately forward biased P-N juriction is a straight line, if the plot is of____ Vs → versus

B. log I Vs V

In an n channel JFET

A. ID, IS and IG are considered positive when flowing into the transistor

The concentration of minority carriers in a semiconductor depends mainly on

B. temperature

Which of the following has highest conductivity?

A. Silver

In a bipolar junction transistor the base region is made very thin so that

A. recombination in base region is minimum

In h-parameters, which of the following is known as open-circuit transconductance?

D. h22

Compared to bipolar junction transistor, a JFET has

D. high input impedance and low voltage gain

The drain characteristics of JFET in operating region, are

B. almost flat

As temperature increases

B. the forbidden energy gap in silicon and germanium decrease

When a reverse bias is applied to a p-n junction, the width of depletion layer.

B. increases

Which of the following devices has a silicon dioxide layer?

D. MOSFET

Which statement is false as regards holes

A. Holes exist in conductors as well as semiconductors

Photo electric emission can occur only if

B. wave length of incident radiation is less. than thresnoid value

The reverse saturation current of a diode does not depend on temperature. A. True

B. False

In a piezoelectric crystal, application of a mechanical stress would produce

C. electric polarization in the crystal

The value of a in a transistor

B. is less than 1 but more than 0.9

An incremental model of a solid state device is one which represents the

A. ac property of the device at desired operating point

What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. E pi-layer formation

D. 4, 3, 2, 1

In a piezoelectric crystal, applications of a mechanical

C. electrical polarization in the crystal

If the reverse voltage across a p-n junction is increased three times, the junction capacitance

C. will decrease by an approximate factor of about 2

Which of these has highly doped p and n region?

B. Tunnel diode

Measurement of Hall coefficient enables the determination of

B. type of conductivity and concentration of charge carriers

The units for transconductance are

D. Siemens

The amount of photoelectric emission current depends on the frequency of incident light.

B. False

When a p-n junction is forward biased

B. the width of depletion layer decreases

The carriers of n channel JFET are

D. free electrons

The depletion layer around p-n junction in JFET consists of

C. immobile charges

Junction temperature is always the same as room temperature.

B. False

When a p-n-p transistor is properly biased to operate in active region the holes from emitter.

A. diffuse through base into collector region

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