A semi conductor device constructed with two different semi conductor layers

A two terminal unilateral electronic component

It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other

The most common function of a diode is to allow an electric current to pass in one direction (called diode's forward direction), while blocking it in the opposite direction (the reverse direction)

Junction Located between two layers of a diode This junction narrows when the diode is forward biased This junction widens the diode is reversed biased

Required voltage across the junction of the diode before forward current cant flow significantly

For Silicon Diode (Si)

For Germanium (Ge)

For Gallium Arsenide

The use of a dc voltage to establish a certain operating condition fo an electronic device

Bias that permits majority carriers or forward current to flow a. Anode must be more positive than the cathode and; b. Voltage between anode and cathode must be greater than the threshold voltage

Bias that prevents majority carriers or forward current to flow a. Cathode is more positive than the anode and; b. Potential difference should not be greater than the reverse breakdown voltage (VBR)

The MAXIMUM VOLTAGE the junction diode can handle when reverse biased

Also known as PEAK REVERSE VOLTAGE (PRV) or PEAK INVERSE VOLTAGE(PIV)

The approximate resistance offered by the p-n junction diode when a small signal AC voltage is applied

Diode Models/Diode Equivalent Circuit

In this model, the diode is assumed to have a zero threshold voltage and has no resistance when forward biased When reverse biased the diode is assumed to open-circuited

In this model, the diode in forward bias is assumed to have a threshold voltage but no resistance When reverse biased the diode is assumed to be open circuited

In this model, the diodes threshold voltage and forward resistance are considered when forward biased When reverse biased, the diode is equivalent to a resistor with a value equal to diodes reverse resistance

The process of applying a DC voltage to establish an operating condition for the diode

An ideal diode presents a(n) ____ when reversed biased and a(n) _____ when forward biased

How many semiconductor junction/s does a diode consist of?

The abbreviation PIV in the case of a diode stands for:

The electrodes of a semiconductor diode are known as:

is a silicon PN junction device that differs from ordinary signal diodes because it is DESIGNED FOR OPERATION in REVERSE-BREAKDOWN REGION.

are often used as a type of VOLTAGE REGULATOR for providing stable reference voltages

Also known as varicap diode, variable capacitance diode, variable reactance diode or tuning diode

type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p-n junction

Used as a voltage-controlled capacitors for tuned-circuits or resonant circuits

Also known as Esaki Diode

type of semiconductor diode that has negative resistance due to the quantum mechanical effect called tunneling

Used in oscillators and amplifiers, and in switching circuits using hysteresis

Diode that emits light when forward bias through the process called ELECTROLUMINESCENCE

Visible ____ are primarily used for switches, optical displays and for illumination purposes

Invisible ____ are used in applications including optical switches, analysis and optical communication, and the likes, with the use of photo sensors

A semiconductor device that converts light into an electrical current

Used in similar applications to other photodetectors, such as photoconductors, charge-coupled devices (CCD), and some sensor applications involving illumination or light signals

diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and n-type semiconductor region

Can function as a variable-resistance (forward-bias) and variable-capacitance (reverse-bias)

Also known as Schottky barrier diode or hot-carrier diode

Semiconductor diode formed by the junction of a semiconductor with a metal

It has the following advantages: a.Low forward voltage drop b.Very fast switching action

A semiconductor junction diode having the ability to generate extremely short pulses

Also called snap-off diode or charge-storage diode or (much less frequently) memory varactor

Used in microwave or parametric amplifier

Also called back diode

variation on Zener diode or Tunnel diode having a better construction for small reverse biases (for example -0.1 to -0.6V) than for forward bias voltages

Can be used as a detector, high-speed switch, and for rectifying weak signals with peak amplitudes of 0.1 to 0.7V